MSK4363(2001) データシートの表示（PDF） - M.S. Kennedy Corporation
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MSK4363 Datasheet PDF : 7 Pages
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ABSOLUTE MAXIMUM RATINGS
V+ High Voltage Supply ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 75V
VIN Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○±13.5V
+Vcc
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○ +16V
-Vcc
-18V
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IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 20A
θJC Thermal Resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 3.1°C/W
TST Storage Temperature Range ○ ○ ○-65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+300°C
(10 Seconds)
TC Case Operating Temperature ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
ELECTRICAL SPECIFICATIONS
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
Test Conditions
Group A
Subgroup
45
POWER SUPPLY REQUIREMENTS
+Vcc
@ +15V
1,2,3
-Vcc
@ -15V
1,2,3
PWM
Free Running Frequency
4,5,6
CONTROL
Transconductance 7
±8 Amps Output
4,5,6
Current Monitor 7
±8 Amps Output
4,5,6
Output Offset
@ 0 Volts Command
4
5,6
HALL INPUTS
Low Level Input Voltage 1
-
High Level Input Voltage 1
-
ERROR AMP
Input Voltage Range 1
-
Slew Rate 1
-
Output Voltage Swing 1
-
Gain Bandwidth Product 1
-
Large Signal Voltage Gain 1
-
OUTPUT
Rise Time 1
-
Fall Time 1
-
Leakage Current 1
@ 64V, +150°C Junction
-
Voltage Drop Across Bridge (1 Upper and 1 Lower)1
@ 10 Amps
-
Voltage Drop Across Bridge (1 Upper and 1 Lower)1 @10Amps, +150°C Junction
-
Drain-Source On Resistance (Each MOSFET) 6
@ 10 Amps, 150°C Junction
-
Diode VSD 1
@ 10 Amps, Each FET
-
trr 1
IF=10 Amps, di/dt=100A/µS
-
Dead Time 1
-
MSK 4363H 3
Min. Typ. Max.
-
60
85
-
16
35
23.5
25
26.5
1.9
0.45
-
-
2
0.5
±5.0
-
2.1
0.55
±25.0
±50.0
-
-
0.8
3.0
-
-
±11 ±12
-
6.5
8
-
±12 ±13
-
-
6.5
-
175
275
-
-
100
-
-
100
-
-
-
750
-
-
0.3
-
-
0.6
-
-
0.026
-
-
2.6
-
280
-
-
2
-
MSK 4363 2
Min. Typ. Max.
Units
-
60
85
mA
-
16
35
mA
22
25
28
KHz
1.8
0.45
-
-
2
0.5
±5.0
-
2.2
0.55
±35.0
-
Amp/Volt
V/Amp
mAmp
mAmp
-
-
3.0
-
0.8
Volts
-
Volts
±11
6.5
±12
-
175
±12
8
±13
6.5
275
-
Volts
-
V/µSec
-
Volts
-
MHz
-
V/mV
-
100
-
nSec
-
100
-
nSec
-
-
750 µAmps
-
-
0.3
Volts
-
-
0.6
Volts
-
-
0.026
Ω
-
-
2.6
Volts
-
280
-
nSec
-
2
-
µSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
2
Rev. G 8/01
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