2N1711 データシートの表示（PDF） - Microsemi Corporation

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2N1711

NPN LOW POWER SILICON TRANSISTOR

Microsemi Corporation 

TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/225

Devices

2N1711

2N1890

Qualified Level

JAN

JANTX

MAXIMUM RATINGS

Ratings

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ TA = +250C (1)

@ TC = +250C (2)

Operating & Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristics

Thermal Impedance

1) Derate linearly 4.57 mW/0C for TA > 250C

2) Derate linearly 17.2 mW/0C for TC > 250C

Symbol

VCBO

VEBO

IC

PT

TJ, Tstg

Symbol

ZθJX

2N1711 2N1890

75

100

7.0

500

0.8

3.0

-65 to +200

Max.

58

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)

Characteristics

Symbol

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

IC = 100 µAdc

2N1711, S

2N1890, S

V(BR)CBO

Collector-Emitter Breakdown Voltage

RBE = 10 Ω, IC = 100 mAdc

2N1711, S

2N1890, S

V(BR)CER

Collector-Emitter Breakdown Voltage

IC = 30 mAdc

2N1711, S

2N1890, S

V(BR)CEO

Emitter-Base Breakdown Voltage

IE = 100 µAdc

Collector-Base Cutoff Current

V(BR)EBO

VCB = 60 Vdc

2N1711

ICBO

VCB = 80 Vdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

2N1890

IEBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Unit

Vdc

Vdc

mAdc

W

W

0C

Unit

0C/W

TO-5*

*See appendix A for package

outline

Min. Max.

Unit

75

Vdc

100

50

Vdc

80

30

Vdc

60

7.0

Vdc

10

ηAdc

10

5.0

ηAdc

120101

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