2N6515RLRMG(2007) データシートの表示（PDF） - ON Semiconductor
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2N6515RLRMG Datasheet PDF : 7 Pages
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NPN − 2N6515, 2N6517; PNP − 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
2N6515
250
2N6517, 2N6520
350
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
V(BR)CBO
2N6515
250
2N6517, 2N6520
350
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
2N6515, 2N6517
6.0
2N6520
5.0
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
ICBO
2N6515
−
2N6517, 2N6520
−
IEBO
2N6515, 2N6517
−
2N6520
−
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
hFE
2N6515
35
2N6517, 2N6520
20
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
50
2N6517, 2N6520
30
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
50
2N6517, 2N6520
30
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
45
2N6517, 2N6520
20
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
25
2N6517, 2N6520
15
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
VCE(sat)
−
−
−
−
VBE(sat)
−
−
−
VBE(on)
−
Current−Gain − Bandwidth Product (Note 1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
fT
40
Ccb
−
Ceb
2N6515, 2N6517
−
2N6520
−
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn−Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ton
−
toff
−
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
nAdc
50
50
nAdc
50
50
−
−
−
−
−
300
200
220
200
−
−
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
2.0
Vdc
200
MHz
6.0
pF
pF
80
100
200
ms
3.5
ms
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