BM29F400B データシートの表示（PDF） - Unspecified

部品番号

コンポーネント説明

メーカー

BM29F400B

4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

Unspecified 

BRIGHT

Microelectronics

Inc.

Switching Waveforms, continued

Preliminary BM29F400T/BM29F400B

Address

CE

OE

WE

Data

5.0V

Vcc

GND

5555H

tWC

PA

t AH

t AS

tGHWL

tWP

t WPH

tCS

tD

H

A0H

PD

t DS

Data Polling

PA

t WHWH1

DQ7

DOUT

Figure 19. Alternate CE Controlled Program Operation Timings

Notes:

1. PA is address of the memory location to be programmed.

2. PD is data to be programmed at BYTE address.

3. /DQ7 is the output of the complement of the data written to the device.

4. DOUT is the output of the data written to the device.

5. Figure indicates last two bus cycles of four bus cycle sequence.

6. These waveforms are for the x16 mode.

A Winbond Company

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Publication Release Date: May 1999

Revision A1

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