BM29F400B データシートの表示（PDF） - Unspecified

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BM29F400B

4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

Unspecified 

BRIGHT

Microelectronics

Inc.

Preliminary BM29F400T/BM29F400B

Switching Waveforms, continued

Address

CE

5555H

t WC

PA

tAS

tAH

/Data Polling

PA

OE

t GHWL

tWP

t WHWH1

WE

Data

5.0V

VCC

GND

t WPH

tCS

t DH

A0H

PD

tDS

DQ7

DOUT

Figure 9. AC Waveforms Program Operations

Notes:

1. PA is address of the memory location to be programmed.

2. PD is data to be programmed at BYTE address.

3. /DQ7 is the output of the complement of the data written to the device.

4. DOUT is the output of the data written to the device.

5. Figure indicates last two bus cycles of four bus cycle sequence.

6. These waveforms are for 16-bit mode.

Address

tAS

tAH

5555H 2AAAH 5555H 5555H 2AAAH

SA

CE

OE

WE

Data

5.0V

VCC

GND

tGHWL

tWP

tWPH

tCS

tDH

AAH

tDS

tVCS

55H

80H

AAH

55H

Figure 10. AC Waveforms Chip/Sector Erase Operations

Notes:

1. SA is the sector address for Sector Erase. Address = X = Don't Care for Chip Erase.

2. These waveforms are for 16-bit mode.

10H/30H

A Winbond Company

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Publication Release Date: May 1999

Revision A1

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