SFT502 データシートの表示（PDF） - Solid State Devices, Inc.
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SFT502 Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT502 and SFT504
Series
Electrical Characteristic 4/
Symbol Min Typ Max Units
Collector – Emitter Breakdown Voltage
IC = 50mA BVCEO
150
––
–– Volts
Collector – Base Breakdown Voltage
IC = 200µA BVCBO
200
––
–– Volts
Emitter – Base Breakdown Voltage
IE = 200µA BVEBO
7
––
–– Volts
Collector – Cutoff Current
VCE = 100 V ICEO
––
––
1
µA
Collector – Cutoff Current
VCB = 100 V
ICBO
––
––
500
nA
Emitter – Cutoff Current
VEB = 6 V
IEBO
––
DC Current Gain *
SFT502
SFT504
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
VCE = 5V, IC = 50mA
20
VCE = 5V, IC = 2.5A
30
VCE = 5V, IC = 5A
VCE = 5V, IC = 50mA
hFE
20
50
VCE = 5V, IC = 2.5A
50
VCE = 5V, IC = 5A
40
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
VCE(Sat)
––
––
IC = 2.5A, IB = 250mA
IC = 5.0A, IB = 500mA
VBE(Sat)
––
––
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A, f = 10MHz
fT
70
––
500
nA
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
0.75
1.5
Volts
––
––
1.3
1.5
Volts
––
––
MHz
Output Capacitance
VCB = 10V, IE = 0A, f = 1MHz
cob
––
––
225
pF
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
VBE = 10V, IC = 0A, f = 1MHz
Cib
td
VCC = 50V,
tr
IC = 5A,
IB1 = IB2 = 0.5A
tS
tf
––
––
900
pF
––
––
50
nsec
––
––
250 nsec
––
––
900 nsec
––
––
300 nsec
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SFT502
SFT504
Package
TO-5
PIN ASSIGNMENT
Pin 1
Emitter
Pin 2
Base
Pin 3 (Case)
Collector
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