MMBTA42L(2012) データシートの表示（PDF） - ON Semiconductor

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MMBTA42L
(Rev.:2012)

High Voltage Transistors NPN Silicon

ON Semiconductor 

MMBTA42L, SMMBTA42L, MMBTA43L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

Vdc

MMBTA42, SMMBTA42

300

−

MMBTA43

200

−

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

Vdc

MMBTA42, SMMBTA42

300

−

MMBTA43

200

−

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

(VCB = 160 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

V(BR)EBO

6.0

−

Vdc

MMBTA42, SMMBTA42

MMBTA43

MMBTA42, SMMBTA42

MMBTA43

ICBO

IEBO

mAdc

−

0.1

−

0.1

mAdc

−

0.1

−

0.1

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

hFE

−

Both Types

25

−

Both Types

40

−

(IC = 30 mAdc, VCE = 10 Vdc)

MMBTA42, SMMBTA42

MMBTA43

40

−

40

−

Collector −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VCE(sat)

Vdc

MMBTA42, SMMBTA42

−

0.5

MMBTA43

−

0.5

Base−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

VBE(sat)

−

0.9

Vdc

Current −Gain − Bandwidth Product

fT

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

Ccb

MMBTA42, SMMBTA42

MMBTA43

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

50

−

MHz

pF

−

3.0

−

4.0

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