SS8050 データシートの表示（PDF） - Weitron Technology

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SS8050

NPN General Purpose Transistors

Weitron Technology 

SS8050

0.5

IB= 3.0mA

0.4

IB= 2.5mA

0.3

IB= 2.0mA

0.2

IB= 1.5mA

IB= 1.0mA

0.1

IB= 0.5mA

0

0

0.4

0.8

1.2

1.6

2.0

VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS)

FIG.1 Static Characteristic

1000

100

VCE =1V

10

1

0.1

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

FIG.2 DC Current Gain

100

VCE = 1V

10

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2

VBE, BASE- EMITTER VOLTAGE(VoLTS)

FIG.3 Base-Emitter On Voltage

10000

1000

VBE (sat)

IC =10 IB

100

VCE (sat)

10

0.1

1

10

100

1000

IC , COLLECTOR CURRENT (mA)

FIG.4 Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

1000

VCE = 10V

100

100

f=1.0 MHz

IE=0

10

10

1

1

10

100

400

IC,COLLECTORN CURRENT

FIG.5 Current Gain Bandwidth Product

1

10

100

VCE,COLLECTOR-BASE VOLTAGE(V)

FIG.6 Collector Output Capacitance

WEITRON

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http://www.weitron.com.tw

19-Jul-05

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