Philips Semiconductors
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base Figure 4
4.1 Transient thermal impedance
PHM12NQ20T
TrenchMOS™ standard level FET
Min Typ Max Unit
- - 2 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
single pulse
10-3
10-5
10-4
10-3
10-2
03aj27
P
δ=
tp
T
10-1
tp
t
T
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 10876
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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