PH9030L データシートの表示（PDF） - NXP Semiconductors.

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PH9030L

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

PH9030L

N-channel TrenchMOS logic level FET

Rev. 01 — 29 July 2008

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ High efficiency due to low switching

and conduction losses

„ Suitable for logic level gate drive

sources

1.3 Applications

„ DC-to-DC convertors

„ Notebook computers

„ Portable equipment

„ Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

Conditions

VDS

drain-source voltage 25 °C ≤ Tj ≤ 150 °C

ID

drain current

Tmb = 25 °C; VGS = 10 V;

see Figure 1; see Figure 3

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

Dynamic characteristics

QGD

gate-drain charge VGS = 4.5 V; ID = 10 A;

VDS = 12 V; see Figure 10;

see Figure 11

Static characteristics

RDSon

drain-source

on-state resistance

VGS = 10 V; ID = 25 A;

Tj = 25 °C; see Figure 8; see

Figure 9

Min Typ Max Unit

-

-

30 V

-

-

63 A

-

-

62.5 W

-

3.2 -

nC

-

7

9

mΩ

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