NTE451 データシートの表示（PDF） - NTE Electronics

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NTE451

Silicon N–Channel JFET Transistor VHF/UHF Amplifier

NTE Electronics 

NTE451

Silicon N–Channel JFET Transistor

VHF/UHF Amplifier

Absolute Maximum Ratings:

Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Gate–Source Breakdown Voltage

Gate Reverse Current

Gate–Source Cutoff Voltage

ON Characteristics

V(BR)GSS IG = –1µA, VDS = 0

IGSS VGS = –20V, VDS = 0

VGS = –20V, VDS = 0, TA = +100°C

VGS(off) ID = 10nA, VDS = 15V

Zero–Gate–Voltage Drain Current

IDSS VDS = 15V, VGS = 0

Small Signal Characteristics Characteristics

Forward Transfer Admittance

Input Admittance

Output Admittance

Output Conductance

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

|yfs|

Re(yis)

|yos|

Re(yos)

gfs

Ciss

Crss

Coss

VDS = 15V, VGS = 0, f = 1kHz

VDS = 15V, VGS = 0, f = 400MHz

VDS = 15V, VGS = 0, f = 1kHz

VDS = 15V, VGS = 0, f = 400MHz

VDS = 15V, VGS = 0, f = 400MHz

VDS = 15V, VGS = 0, f = 1MHz

VDS = 15V, VGS = 0, f = 1MHz

VDS = 15V, VGS = 0, f = 1MHz

Min Typ Max Unit

–25 – –

V

– – –1.0 nA

– – –0.2 nA

–0.5 – –4.0 V

4 – 20 mA

3500 – 7000 µmho

–

– 1000 µmho

–

– 60 µmho

–

– 100 µmho

3000 – – µmho

–

–

5

pF

–

–

1

pF

–

–

2

pF

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