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MMBTA06WT1 データシートの表示(PDF) - ON Semiconductor

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MMBTA06WT1
ON-Semiconductor
ON Semiconductor 
MMBTA06WT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MMBTA06WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 2)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
V(BR)CEO
80
V(BR)EBO
4.0
ICES
ICBO
hFE
100
100
VCE(sat)
VBE(on)
Max
Unit
Vdc
Vdc
0.1
mAdc
mAdc
0.1
0.25
Vdc
1.2
Vdc
fT
100
MHz
5.0 ms
+10 V
0
tr = 3.0 ns
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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