Elektronische Bauelemente
MMBT4401W
NPN Silicon
Switching Transistor
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
STATIC CHARACTERISTICS
TJ = 125°C
25°C
– 55°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, Collector Current (mA)
Figure 15. DC Current Gain
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, Base Current (mA)
Figure 16. Collector Saturation Region
TJ = 25°C
500 mA
20 30 50
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, Collector Current (mA)
Figure 17. “On” Voltages
+ 0.5
0
qVC for VCE(sat)
– 0.5
– 1.0
– 1.5
– 2.0
qVB for VBE
– 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, Collector Current (mA)
Figure 18. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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