MJ802 データシートの表示（PDF） - Inchange Semiconductor
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MJ802 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ802
DESCRIPTION
·High DC Current Gain-
: hFE= 25-100@IC= 7.5A
·Excellent Safe Operating Area
·Complement to Type MJ4502
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
90
V
VEBO Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
30
A
IBB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
isc Website：www.iscsemi.cn
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