MJ15011 データシートの表示（PDF） - Inchange Semiconductor
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MJ15011 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ15011
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB=B 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 2V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 250V;VBE(off)= 1.5V
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
MIN MAX UNIT
250
V
0.8
V
2.5
V
2.0
V
1.0 mA
0.5 mA
0.5 mA
20 100
5
750 pF
isc Website：www.iscsemi.cn
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