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MCP2030-ISL データシートの表示(PDF) - Microchip Technology

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MCP2030-ISL
Microchip
Microchip Technology 
MCP2030-ISL Datasheet PDF : 66 Pages
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MCP2030
AC Characteristics (Continued)
Electrical Specifications: Standard Operating Conditions (unless otherwise stated)
Supply Voltage
Operating temperature
LCCOM connected to VSS
LC Signal Input
Carrier Frequency
2.0V VDD 3.6V
-40°C TA +85°C
Sinusoidal 300 mVPP
125 kHz
LCCOM connected to VSS
Parameters
RSSI current output
RSSI current linearity
Sym.
IRSSI
Min.
6
Typ†
0.65
12
100
Max.
2
20.3
ILRRSSI
-15
15
Units
μA
μA
μA
%
Conditions
VIN = 37 mVPP
VIN = 370 mVPP
VDD = 3.0V, VIN = 0 to 4 VPP
Linearly increases with input signal ampli-
tude.
Tested at VIN = 37 mVPP, 100 mVPP, and
370 mVPP at +25ºC.
Tested at room temperature only (see
Equation 5-1 and Figure 5-7 for test method).
* Parameter is characterized but not tested.
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Note 1: Required output enable filter high time must account for input path analog delays (= TOEH - TDR + TDF).
2: Required output enable filter low time must account for input path analog delays (= TOEL + TDR - TDF).
SPI Timing
Electrical Specifications: Standard Operating Conditions (unless otherwise stated)
Supply Voltage
Operating temperature
LC Signal Input
Carrier Frequency
2.0V VDD 3.6V
-40°C TA +85°C
Sinusoidal 300 mVPP
125 kHz
LCCOM connected to VSS
Parameters
Sym.
Min.
Typ†
Max.
Units
Conditions
SCLK Frequency
FSCLK
3
MHz
CS fall to first SCLK edge setup time
TCSSC
100
ns
SDI setup time
TSU
30
ns
SDI hold time
THD
50
ns
SCLK high time
THI
150
ns
SCLK low time
TLO
150
ns
SDO setup time
TDO
150
ns
SCLK last edge to CS rise setup time
TSCCS
100
ns
CS high time
TCSH
500
ns
CS rise to SCLK edge setup time
TCS1
50
ns
SCLK edge to CS fall setup time
TCS0
50
ns SCLK edge when CS is high
Rise time of SPI data
(SPI Read command)
TRSPI
10
ns VDD = 3.0V. Time is measured from 10% to
90% of amplitude
Fall time of SPI data
(SPI Read command)
TFSPI
10
ns VDD = 3.0V. Time is measured from 90% to
10% of amplitude
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
DS21981A-page 6
© 2005 Microchip Technology Inc.

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