KSD2058 データシートの表示（PDF） - Inchange Semiconductor
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KSD2058 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A IB1=-IB2=0.2A
VCC=30V ,RL=15Ω
hFE Classifications
O
Y
G
60-120 100-200 150-300
Product Specification
KSD2058
MIN TYP. MAX UNIT
60
V
1.5
V
3.0
V
10 μA
1
mA
60
300
3.0
MHz
35
pF
0.65
μs
1.3
μs
0.65
μs
2
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