IL66B(2004) データシートの表示（PDF） - Vishay Semiconductors

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IL66B
(Rev.:2004)

Optocoupler, Photodarlington Output, With Internal RBE

Vishay Semiconductors 

IL66B

Vishay Semiconductors

Output

Parameter

Collector-emitter breakdown voltage

Emitter-collector breakdown voltage

Power dissipation

Derate linearly from 25 °C

Test condition

Coupler

Parameter

Isolation test voltage

Isolation resistance

Total dissipation

Derate linearly

Creepage path

Clearance path

Storage temperature

Operating temperature

Lead soldering time

Test condition

t = 1.0 sec.

VIO = 500 V, Tamb = 25 °C

VIO = 500 V, Tamb = 100 °C

from 25 °C

at 260 °C

Symbol

BVCEO

BVECO

Pdiss

Symbol

VISO

RIO

RIO

Ptot

Tstg

Tamb

Tsld

Value

60

5.0

200

2.6

Value

5300

≥ 1012

≥ 1011

250

3.3

7

7

- 55 to + 150

- 55 to + 100

10

Unit

V

V

mW

mW/°C

Unit

VRMS

Ω

Ω

mW

mW/°C

min mm

min mm

°C

°C

sec.

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Forward voltage

Reverse current

Capacitance

Test condition

IF = 10 mA

VR = 3.0 V

VR = 0

Symbol

Min

Typ.

Max

Unit

VF

1.25

1.5

V

IR

0.01

100

µA

CO

25

pF

Output

Parameter

Collector-emitter breakdown

voltage

Collector-emitter leakage

current

Test condition

IC = 100 µA

VCE = 50 V, IF = 0

Symbol

Min

Typ.

Max

Unit

BVCEO

60

V

ICEO

1.0

100

nA

Coupler

Parameter

Saturation voltage

Test condition

IC = 10 mA

Current Transfer Ratio

Parameter

Current Transfer Ratio

Test condition

IF = 2.0 mA, VCE = 5.0 V

Symbol

Min

Typ.

Max

Unit

VCEsat

1.0

V

Part

Symbol

Min

Typ.

Max

Unit

IL66B-1 CTR

200

%

IL66B-2 CTR

750

1000

%

www.vishay.com

2

Document Number 83639

Rev. 1.5, 26-Oct-04

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