BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8 1V
VF
Figure 1. Forward characteristics
1000
5
4
3
rzj
2
100
5
4
3
2
TJ = 25 °C
100
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Figure 4. Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF
1000
7
5
Ctot
4
3
VR = 1 V
2
V =2V
R
TJ = 25 °C
100
7
V =1V
R
5
4
VR = 2 V
3
2
10
1
18118
2 3 45
10 2 3 4 5 100 V
V at I = 5 mA
Z
Z
Figure 5. Capacitance vs. Zener Voltage
°C/W
103
7
5
4
3
RthA 2
0.5
102 0.2
7 0.1
5
4 0.05
3 0.02
2 0.01
10
7
5
4
3
2
V=0
1
10-5 10-4
10-3
18116
tp
tp
T
T
10-2 10-1
tp
PI
1 10s
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1 2
18119
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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