BU426 データシートの表示（PDF） - Inchange Semiconductor
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BU426 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU426
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 375V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCES
Collector-Emitter Voltage VBE= 0
800
V
VCEO
Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
70
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.1 ℃/W
isc Website：www.iscsemi.cn
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