VP2020L, BSS92
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–10.0
Threshold Region
VDS = –5 V
120
VGS = 0 V
f = 1 MHz
100
Capacitance
–1.0
80
TJ = 150_C
60
–0.1
125_C
25_C
–55_C
–0.01
0
–12
–1.0
–2.0
–3.0 –3.5
VGS – Gate-to-Source Voltage (V)
Gate Charge
ID = –0.1 A
–10
–8
VDS = –100 V
–6
–160 V
–4
40
Ciss
20
Coss
Crss
0
0
–10
–20
–30
–40
–50
VDS – Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
tf
VDD = –25 V
RG = 25 W
VGS = 0 to –10 V
td(off)
10
tr
td(on)
–2
0
0
0.5
1.0
1.5
2.0
2.5
Qg – Total Gate Charge (nC)
1
–10
–100
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
–1000
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
0.1
1.0
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Document Number: 70210
S-04279—Rev. E, 16-Jun-01