BFY51 データシートの表示（PDF） - Philips Electronics
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BFY51 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BFY50
ICBO
collector cut-off current
BFY51
ICBO
collector cut-off current
BFY52
IEBO
emitter cut-off current
hFE
DC current gain
BFY50
hFE
DC current gain
BFY51
hFE
DC current gain
BFY52
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 60 V
−
−
IE = 0; VCB = 60 V; Tj = 100 °C −
−
IE = 0; VCB = 80 V
−
−
IE = 0; VCB = 80 V; Tj = 100 °C −
−
IE = 0; VCB = 40 V
−
−
IE = 0; VCB = 40 V; Tj = 100 °C −
−
IE = 0; VCB = 60 V
−
−
IE = 0; VCB = 60 V; Tj = 100 °C −
−
IE = 0; VCB = 30 V
−
−
IE = 0; VCB = 30 V; Tj = 100 °C −
−
IE = 0; VCB = 40 V
−
−
IE = 0; VCB = 40 V; Tj = 100 °C −
−
IC = 0; VEB = 5 V
−
−
IC = 0; VEB = 5 V; Tj = 100 °C
−
−
IC = 0; VEB = 6 V
−
−
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
20
−
30
−
20
−
15
−
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
30
−
40
−
25
−
15
−
IC = 10 mA; VCE = 10 V
IC = 150 mA; VCE = 10 V
IC = 500 mA; VCE = 10 V
IC = 1 A; VCE = 10 V
30
−
60
−
30
−
15
−
50
nA
2.5 µA
500 nA
30
µA
50
nA
2.5 µA
500 nA
30
µA
50
nA
2.5 µA
500 nA
30
µA
50
nA
2.5 µA
500 nA
−
−
−
−
−
−
−
−
−
−
−
−
1997 Apr 22
4
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