BF420 データシートの表示（PDF） - General Semiconductor

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BF420

Small Signal Transistors (NPN)

General Semiconductor 

BF420, BF422

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Collector-Base Breakdown Voltage BF420 V(BR)CBO 300

–

–

at IC = 100 µA, IB = 0

BF422

V(BR)CBO

250

–

–

Collector-Emitter Breakdown Voltage BF422 V(BR)CEO 250

–

–

at IC = 10 mA, IE = 0

Collector-Emitter Breakdown Voltage BF420 V(BR)CER 300

–

–

at RBE = 2.7 kΩ, IC = 10 mA

Emitter-Base Breakdown Voltage

at IE = 100 µA, IB = 0

V(BR)EBO

5

–

–

Collector-Base Cutoff Current

at VCB = 200 V, IE = 0

ICBO

–

–

10

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, VCE = 250 V

ICER

50

at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C

ICER

10

Collector Saturation Voltage

at IC = 30 mA, IB = 5 mA

VCEsat

–

–

0.6

DC Current Gain

at VCE = 20 V, IC = 25 mA

hFE

50

–

–

Gain-Bandwidth Product

at VCE = 10 V, IC = 10 mA

fT

60

–

–

Feedback Capacitance

at VCE = 30 V, IC = 0, f = 1 MHz

Cre

–

–

1.6

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Unit

V

V

V

V

V

nA

nA

µA

V

–

MHz

pF

K/W

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