BC307 データシートの表示（PDF） - Philips Electronics
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BC307 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BC307; BC307B
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
collector cut-off current
emitter cut-off current
DC current gain
BC307
IE = 0; VCB = −30 V;
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −2 mA; VCE = −5 V; see Fig.2
BC307B
collector-emitter saturation voltage IC = −100 mA; IB = −5 mA; note 1
base-emitter saturation voltage IC = −100 mA; IB = −5 mA; note 1
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 1
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz;
note 1
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
MAX.
−15
−4
−15
UNIT
nA
µA
nA
125 455
222 455
−
−600 mV
−
−1.1 V
600 720 mV
−
3
pF
100 −
MHz
−
10
dB
400
handbook, full pagewidth
hFE
300
VCE = 5 V
MBH727
200
100
0
10−2
BC307B.
10−1
1
10
Fig.2 DC current gain; typical values.
102
IC (mA)
103
1997 Mar 07
4
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