BAT54J,115 データシートの表示（PDF） - NXP Semiconductors.

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BAT54J,115

Schottky barrier single diode

NXP Semiconductors. 

NXP Semiconductors

BAT54J

Schottky barrier single diode

2. Pinning information

Table 2.

Pin

1

2

Pinning

Description

cathode

anode

[1] The marking bar indicates the cathode.

3. Ordering information

Simplified outline Symbol

[1]

1

2

1

2

sym001

Table 3. Ordering information

Type number Package

Name

Description

BAT54J

SC-90

plastic surface-mounted package; 2 leads

Version

SOD323F

4. Marking

Table 4. Marking codes

Type number

BAT54J

Marking code

AP

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VR

reverse voltage

-

IF

forward current

-

IFRM

repetitive peak forward

tp ≤ 1 s; δ ≤ 0.5

-

current

IFSM

Ptot

Tj

Tamb

Tstg

non-repetitive peak forward

current

total power dissipation

junction temperature

ambient temperature

storage temperature

square wave;

tp < 10 ms

Tamb ≤ 25 °C

-

[1] -

-

−65

−65

Max Unit

30

V

200

mA

300

mA

600

mA

550

mW

150

°C

+150 °C

+150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

cathode 1 cm2.

BAT54J_1

Product data sheet

Rev. 01 — 8 March 2007

© NXP B.V. 2007. All rights reserved.

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