BAP63-02 データシートの表示（PDF） - NXP Semiconductors.
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BAP63-02 Datasheet PDF : 7 Pages
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NXP Semiconductors
Silicon PIN diode
GRAPHICAL DATA
10
handbook, halfpage
rD
(Ω)
1
MGW126
10−1
10−1
1
10 IF (mA) 102
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
Product specification
BAP63-02
400
handbook, halfpage
Cd
(fF)
300
MGW127
200
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
| s 21| 2
(dB)
− 0.1
− 0.2
− 0.3
(1)
(2)
(3)
(4)
MGW128
− 0.4
− 0.5
0
1
2 f (GHz) 3
(1) IF = 100 mA.
(2) IF = 10 mA.
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss (|s21|2) of the diode in on-state
as a function of frequency; typical values.
0
handbook, halfpage
| s 21| 2
(dB)
− 10
− 20
− 30
− 40
0
1
MGW129
2 f (GHz) 3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
Rev. 04 - 8 January 2008
4 of 7
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