Philips Semiconductors
General purpose PIN diode
Product specification
BAP50-03
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
CONDITIONS
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
MIN.
−
50
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
25
14
3
MAX. UNIT
1.1 V
−
V
100 nA
−
pF
0.55 pF
0.35 pF
40
Ω
25
Ω
5
Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
1999 May 10
3