74AHC1G00 データシートの表示（PDF） - Philips Electronics

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74AHC1G00

2-input NAND gate

Philips Electronics 

Philips Semiconductors

2-input NAND gate

Product specification

74AHC1G00; 74AHCT1G00

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

CONDITIONS

74AHC1G

74AHCT1G

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

VCC

VI

VO

Tamb

supply voltage

2.0 5.0 5.5 4.5 5.0 5.5 V

input voltage

0

−

5.5 0

−

5.5 V

output voltage

0

−

VCC 0

−

VCC V

operating ambient see DC and AC

−40 +25 +125 −40 +25 +125 °C

temperature

characteristics per device

tr, tf

(∆t/∆f)

input rise and fall VCC = 3.3 ±0.3 V

times

VCC = 5 ±0.5 V

−

−

100 −

−

−

ns/V

−

−

20

−

−

20

ns/V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

VCC

supply voltage

VI

input voltage

IIK

input diode current

IOK

output diode current

IO

output source or sink current

ICC

VCC or GND current

Tstg

storage temperature

PD

power dissipation per package

CONDITIONS

VI < −0.5 V

VO < −0.5 V or VO > VCC + 0.5 V; note 1

−0.5 V < VO < VCC + 0.5 V

for temperature range from −40 to +125 °C

MIN.

−0.5

−0.5

−

−

−

−

−65

−

MAX.

+7.0

+7.0

−20

±20

±25

±75

+150

250

UNIT

V

V

mA

mA

mA

mA

°C

mW

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2002 May 27

5

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