2SD1949 データシートの表示（PDF） - Secos Corporation.

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2SD1949

NPN Silicon General Purpose Transistor

Secos Corporation. 

Elektronische Bauelemente

2SD1949

NPN Silicon

General Purpose Transistor

Electrical characteristic curves

200

VCE=6V

100

50

20

10

5

2

1

0.5

0.2

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2

BASE TO VOLTAGE : VBE (V)

Fig.1 Ground emitter propagation

characteristics

100 VCE=6V

0.50

0.45

80

0.40

0.35

60

0.30

0.25

40

0.20

0.15

20

0.10

0.05

IB=0mA

0

0

1

2

3

4

5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Ground emitter output characteristics

1000

500

200

100

Ta=25 C

VCE=3V

1V

50

0.1 0.2 0.5 1 2 5 10 20 50 100 200 500

COLLECTOR CURRENT IC (mA)

Fig.3 DC current gain vs. Collector current ( )

1000

500

200

Ta=75 C

25 C

-25 C

100

50

VCE=10V

0.5

0.2

0.1

0.05

Ta=25 C

IC/IB=100/1

50/1

20/1

10/1

20

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT IC (mA)

0.02

5

10 20

50 100 200 500

COLLECTOR CURRENT IC (mA)

Fig.4 DC current gain vs. Collector currnet ( )

Fig.5 Collector-emitter saturation voltage

vs. Collector current

IC/IB=10

0.5

0.2

0.1

0.05

Ta=75 C

25 C

-25 C

0.02

5 10 20 50 100 200 500 1000

COLLECTOR CURRENT IC (mA)

Fig.6 Collector-emitter saturation voltage

vs. collector current

Ta=25 C

f=1MHz

50

IE=0A

Cib

20

10

Cob

5

0.1 0.2 0.5 1 2

5 10 20

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.7 Input-and-output capacity

vs.voltage characteristic

Ta=25 C

500

VCE=6V

200

100

-1

-2 -5 -10 -20 -50

EMITTER CURRENT : IE (mA)

Fig.8 Transition frequency

vs.emitter current

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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