2SC1004 データシートの表示（PDF） - Inchange Semiconductor
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2SC1004 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=150m A;IB=30mA
VBEsat Base-emitter saturation voltage
IC=150m A;IB=30mA
ICBO
Collector cut-off current
VCB=800V;IE=0
IEBO
Emitter cut-off current
VEB=4V;IC=0
hFE
DC current gain
IC=150m A ; VCE=15V
fT
Transition frequency
IC=150m A ; VCE=15V
Product Specification
2SC1004
MIN TYP. MAX UNIT
700
V
5
V
5.0
V
1.5
V
10 μA
10 μA
30
160
2.0
MHz
2
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