BCW68GLT1G(2009) データシートの表示（PDF） - ON Semiconductor

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BCW68GLT1G
(Rev.:2009)

General Purpose Transistor

ON Semiconductor 

BCW68GLT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0)

Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)

Collector Cutoff Current

(VCE= −45 Vdc, IE = 0)

(VCE= −45 Vdc, IB = 0, TA = 150°C)

Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

(IC = −300 mAdc, VCE = −1.0 Vdc)

Collector−Emitter Saturation Voltage (IC = −300 mAdc, IB = −30 mAdc)

Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)

Output Capacitance

(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)

Noise Figure

(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

Symbol

Min

Typ

Max Unit

V(BR)CEO

−45

−

−

Vdc

V(BR)CES

−60

−

−

Vdc

V(BR)EBO

−5.0

−

−

Vdc

ICES

−

−

−20 nAdc

−

−

−10 mAdc

IEBO

−

−

−20 nAdc

hFE

−

120

−

400

160

−

−

60

−

−

VCE(sat)

−

−

−1.5

Vdc

VBE(sat)

−

−

−2.0

Vdc

fT

Cobo

Cibo

NF

100

−

−

MHz

−

−

18

pF

−

−

105

pF

−

−

10

dB

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