Philips Semiconductors
Dual Dolby* B-type noise reduction circuit
for playback applications
Preliminary specification
TEA0675
CHARACTERISTICS
VCC = 10 V; f = 20 Hz to 20 kHz; Tamb = 25 °C; all levels are referenced to 387.5 mV (RMS) (0 dB) at test point (TP)
pin OUTA or OUTB; see Fig.1; NR on/AMS off; EQ switch in the 70 µs position; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCC
ICC
αm
THD
HR
S------N+-----N---
PSRR
fo
αcs
αcc
RL
Gv
VI(offset)(DC)
Ii(bias)
REQ
Ri
Av
supply voltage
supply current
channel matching
total harmonic distortion
(2nd and 3rd harmonic)
headroom at output
signal plus noise-to-noise
ratio
power supply ripple
rejection
frequency response;
referenced to TP
channel separation
crosstalk between active
and inactive input
load resistance at output
voltage gain of
pre-amplifier
DC input offset voltage
input bias current
equalization resistor
input resistance head
inputs
open-loop amplification
7.6
−
f = 1 kHz; Vo = 0 dB; NR off
f = 1 kHz; Vo = 0 dB
f = 10 kHz; Vo = 10 dB
VCC = 7.6 V; THD = 1%;
f = 1 kHz
−0.5
−
−
12
internal gain 40 dB, linear; 78
CCIR/ARM weighted;
decode mode; see Fig.25
Vi(rms) = 0.25 V; f = 1 kHz; 52
see Fig.22
encode mode; see Fig.25
Vo = −25 dB; f = 0.2 kHz
Vo = 0 dB; f = 1 kHz
Vo = −25 dB; f = 1 kHz
Vo = −25 dB; f = 5 kHz
Vo = −35 dB; f = 10 kHz
Vo = 10 dB; f = 1 kHz;
see Fig.23
−22.9
−1.5
−17.8
−18.1
−24.4
57
f = 1 kHz; Vo = 10 dB;
70
NR off; see Fig.23
AC-coupled; f = 1 kHz;
10
Vo = 12 dB; THD = 1%
from pin INA1 or INA2 to 29
pin EQFA and from
pin INB1 or
INB2 to pin EQFB;
f = 1 kHz
−
−
4.7
60
pin INA1 or
INA2 to pin EQA and
pin INB1 or INB2 to
pin EQB
f = 10 kHz
80
f = 400 Hz
104
10
12
V
26
31
mA
−
+0.5
dB
0.08
0.15
%
0.15
0.3
%
−
−
dB
84
−
dB
57
−
dB
−24.4
−25.9
dB
0
+1.5
dB
−19.3
−20.8
dB
−19.6
−21.1
dB
−25.9
−27.4
dB
63
−
dB
77
−
dB
−
−
kΩ
30
31
dB
2
−
mV
0.1
0.4
µA
5.8
6.9
kΩ
100
−
kΩ
86
−
dB
110
−
dB
1996 Jun 07
6