MRF8S19260HR6 データシートの表示（PDF） - Freescale Semiconductor

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MRF8S19260HR6

Transistors RF MOSFET 65V N-CH 1960MHz

Freescale Semiconductor 

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, 1930--1990 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

245

—

IMD Symmetry @ 220 W PEP, Pout where IMD Third Order

IMDsym

Intermodulation  30 dBc (Delta IMD Third Order Intermodulation

—

15

—

between Upper and Lower Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

75

—

Gain Flatness in 60 MHz Bandwidth @ Pout = 74 W Avg.

Gain Variation over Temperature

(--30°C to +85°C)

GF

—

0.6

—

∆G

—

0.014

—

Output Power Variation over Temperature

(--30°C to +85°C) (1)

∆P1dB

—

0.011

—

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

Unit

W

MHz

MHz

dB

dB/°C

dB/°C

RF Device Data

Freescale Semiconductor, Inc.

MRF8S19260HR6 MRF8S19260HSR6

3

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