KSC5502DT(2001) データシートの表示（PDF） - Fairchild Semiconductor
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KSC5502DT Datasheet PDF : 11 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min Typ. Max. Units
tfr
Diode Froward Recvery Time
(di/dt=10A/µs)
VCE(DSAT) Dynamic Saturation Voltage
IF=0.2A
IF=0.4A
IF=1A
IC=0.4A, IB1=80mA
VCC=300V
@ 1µs
@ 3µs
650
ns
740
ns
785
ns
7.2
V
1.8
V
IC=1A, IB1=200mA @ 1µs
VCC=300V
@ 3µs
18
V
6
V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s)
tON
Turn On Time
tOFF
Turn Off Time
tON
Turn On Time
tOFF
Turn Off Time
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=0.4A,
IB1=80mA
IB2=0.2A,
VCC=300V
RL = 750Ω
IC=1A,
IB1=160mA
IB2=160mA,
VCC=300V
RL = 300Ω
IC=0.4A,
IB1=80mA
IB2=0.2A,
VZ=300V
LC=200H
IC=0.8A,
IB1=160mA
IB2=160mA,
VCC=300V
LC=200H
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
175 350 ns
185
ns
2.1
3.0
µs
2.6
µs
240 450 ns
310
ns
3.7
5.0
µs
4.5
µs
1.2
2.0
µs
1.5
µs
90 200 ns
65
ns
185 350 ns
145
ns
3.3
4.5
µs
3.75
µs
90 250 ns
160
ns
300 600 ns
570
ns
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
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