ZXMP10A18GTC データシートの表示（PDF） - Diodes Incorporated.

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ZXMP10A18GTC

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMP10A18G

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (c)

@ VGS=10V; TA=25°C (b)

@VGS=10V; TA=70°C (b)

@ VGS=10V; TA=25°C (a)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj, Tstg

LIMIT

-100

±20

-3.7

-3.0

-2.6

-16.5

-5.3

-16.5

2

16

3.9

31

-55 to +150

UNIT

V

V

A

A

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient (a)

Junction to Ambient (b)

SYMBOL

R⍜JA

R⍜JA

VALUE

62.5

32.2

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300␮s - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

2

ISSUE 1 - MARCH 2005

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