ZXMP10A17E6TC データシートの表示（PDF） - Zetex => Diodes

部品番号

コンポーネント説明

メーカー

ZXMP10A17E6TC

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMP10A17E6

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @ VGS=10V; TA=25°C (b)

@ VGS=10V; TA=70°C (b)

@ VGS=10V; TA=25°C (a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

VDSS

VGS

ID

IDM

IS

ISM

PD

Power Dissipation at TA=25°C (b)

PD

Linear Derating Factor

Operating and Storage Temperature Range

Tj, Tstg

LIMIT

-100

±20

-1.6

-1.3

-1.3

-7.7

-2.1

-7.7

1.1

8.8

1.7

13.6

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient (a)

Junction to Ambient (b)

SYMBOL

RθJA

RθJA

VALUE

113

73

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph.

SEMICONDUCTORS

ISSUE 2 - SEPTEMBER 2005

2

Share Link: