ZXMN4A06KTC データシートの表示（PDF） - Zetex => Diodes

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ZXMN4A06KTC

40V N-channel enhancement mode MOSFET

Zetex => Diodes 

ZXMN4A06K

Electrical characteristics (at TA = 25°C unless otherwise stated)

Parameter

Symbol Min.

Static

Drain-source breakdown

voltage

V(BR)DSS 40

Zero gate voltage drain current IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th)

1.0

Static drain-source on-state

resistance (*)

RDS(on)

Forward transconductance(‡)

Dynamic (‡)

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching (†) (‡)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Source-drain diode

Diode forward voltage(*)

VSD

Reverse recovery time(†)

trr

Reverse recovery charge(‡)

Qrr

Typ. Max. Unit Conditions

V ID=250␮A, VGS=0V

1

100

0.050

0.075

11.5

␮A VDS=40V, VGS=0V

nA VGS=±20V, VDS=0V

V ID=250␮A, VDS= VGS

⍀ VGS=10V, ID=4.5A

⍀ VGS=4.5V, ID=3.2A

S VDS=15V,ID=4.5A

827

pF

133

pF VDS=20 V, VGS=0V,

f=1MHz

84

pF

3.2

ns

3.8

23.3

10.9

ns VDD =20V, ID=1A

ns RG=6.0⍀, VGS=10V

ns (refer to test circuit)

17.1

nC

2.41

3.4

nC VDS=20V,VGS=10V,

ID=4.5A

nC (refer to test circuit)

0.83 0.95

16

9

V TJ=25°C, IS=4.5A,

VGS=0V

ns TJ=25°C, IF=4A,

di/dt= 100A/␮s

nC

NOTES:

(*) Measured under pulsed conditions. Width Յ300␮s. Duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Issue 1 - March 2006

4

© Zetex Semiconductors plc 2005

www.zetex.com

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