VO4156D データシートの表示（PDF） - Vishay Semiconductors

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VO4156D

Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current

Vishay Semiconductors 

www.vishay.com

VO4154, VO4156

Vishay Semiconductors

SAFETY AND INSULATION RATINGS

PARAMETER

Climatic classification (according to IEC68 part 1)

Pollution degree (DIN VDE 0109)

Comparative tracking index per DIN IEC112/VDE 0303 part 1,

group IIIa per DIN VDE 6110 175 399

VIOTM

VIORM

PSO

ISI

TSI

Creepage distance

Crearance distance

TEST CONDITION SYMBOL

VIOTM

VIORM

PSO

ISI

TSI

MIN.

175

8000

890

7

7

TYP.

55/100/21

2

MAX.

399

500

250

175

UNIT

V

V

mW

mA

°C

mm

mm

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

1.5

1.3

1.1

0 °C

0.9

25 °C

50 °C

0.7

0.1

19660

1.0

10.0

IF (mA)

100.0

Fig. 2 - Diode Forward Voltage vs. Forward Current

10 000

1000

100

IRDM at 630 V

10

20008

1

0

20

40

60

80 100

TA - Ambient Temperature (°C)

Fig. 4 - Leakage Current vs. Ambient Temperature

42

40

38

36

34

32

- 60 - 40 - 20 0

IR = 10 µA

20 40 60 80 100

19662

Temperature (ºC)

Fig. 3 - Diode Reverse Voltage vs. Temperature

1000

100

0 °C

10

25 °C

85 °C

IF = 2 mA

1

1.0 1.5 2.0 2.5 3.0 3.5

19685

VTM - On-State Voltage (V)

Fig. 5 - On-State Current vs. On-State Voltage

Rev. 1.6, 23-Feb-12

4

Document Number: 84797

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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