VBT1060CE3/8W(2018) データシートの表示（PDF） - Vishay Semiconductors

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VBT1060CE3/8W
(Rev.:2018)

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3

www.vishay.com

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.415 (10.54)

0.380 (9.65)

TO-220AB

0.161 (4.08)

0.139 (3.53)

0.113 (2.87)

0.103 (2.62)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.160 (4.06)

0.140 (3.56)

PIN

123

0.057 (1.45)

0.045 (1.14)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.104 (2.65)

0.096 (2.45)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.022 (0.56)

0.014 (0.36)

0.603 (15.32)

0.573 (14.55)

0.110 (2.79)

0.100 (2.54)

Revision: 16-Mar-18

4

Document Number: 89131

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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