UPA810 データシートの表示（PDF） - NEC => Renesas Technology

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UPA810

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD

NEC => Renesas Technology 

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

µPA810T

HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD

The µPA810T has built-in 2 low-voltage transistors which are designed to

amplify low noise in the VHF band to the UHF band.

PACKAGE DRAWINGS

(Unit: mm)

FEATURES

• Low Noise

NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• High Gain

|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• A Small Mini Mold Package Adopted

• Built-in 2 Transistors (2 × 2SC4226)

2.1±0.1

1.25±0.1

ORDERING INFORMATION

PART NUMBER QUANTITY

µPA810T

Loose products

(50 PCS)

µPA810T-T1 Taping products

(3 KPCS/Reel)

PACKING STYLE

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

Remark If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

PT

Tj

Tstg

RATING

20

12

3

100

150 in 1 element

200 in 2 elementsNote

150

–65 to +150

Note 110 mW must not be exceeded in 1 element.

UNIT

V

V

V

mA

mW

˚C

˚C

6

5

4

Q1

Q2

1

2

3

PIN CONNECTIONS

1. Collector (Q1) 4. Emitter (Q2)

2. Base (Q2)

5. Emitter (Q1)

3. Collector (Q2) 6. Base (Q1)

The information in this document is subject to change without notice.

Document No. P11463EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

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