TSDF1220F データシートの表示（PDF） - Vishay Semiconductors

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TSDF1220F

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Transition frequency

VCE = 5 V, IC = 20 mA, f = 1 GHz

fT

Collector-base capacitance

VCB = 1 V, f = 1 MHz

Ccb

Collector-emitter capacitance VCE = 1 V, f = 1 MHz

Cce

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

Noise figure

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

F

ZL = 50 Ω, f = 2 GHz

Power gain

VCE = 5 V, IC = 20 mA,

Gpe

ZS = ZSopt, ZL = 50 Ω,

f = 2 GHz

Transducer gain

VCE = 5 V, IC = 20 mA, f = 2 GHz,

ZO = 50 Ω

|S21se|2

Third order intercept point at VCE = 5 V, IC = 20 mA, f = 2 GHz

IP3

output

Package Dimensions in mm

TSDF1220F

Vishay Semiconductors

Typ.

Max

Unit

12

GHz

0.3

pF

0.35

pF

0.5

pF

1.2

dB

13.5

dB

12

dB

22

dBm

1.5 (0.059)

1.7 (0.066)

ISO Method E

3 x 0.20 (0.008)

3 x 0.30 (0.012)

0.1 B

0.1 A

1.5 (0.059)

1.7 (0.066)

0.4 (0.016)

0.65(0.026)

1.15( 0.045)

16866

0.5 (0.016)

1.0 (0.039)

0.5 (0.016)

Document Number 85106

Rev. 1.3, 02-May-05

www.vishay.com

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