TPD1024AS(2002) データシートの表示（PDF） - Toshiba

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TPD1024AS
(Rev.:2002)

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Toshiba 

Maximum Ratings (Ta = 25°C )

Characteristic

Drain-source voltage

Output current

Input voltage

Power dissipation

Operating temperature

Junction temperature

Storage temperature

Symbol

Rating

Unit

VDS (DC)

40

V

ID

1.5

A

VGS

− 0.5 to 6

V

PD

1.2

W

Topr

− 40 to 85

°C

Tj

150

°C

Tstg

− 55 to 150

°C

Recommendable Condition

Characteristic

Input voltage

Symbol

VIN

Test Condition

―

Electrical Characteristics (Tj = 25°C)

Characteristic

Drain-source breakdown voltage

Operating supply voltage

Current at output off

Input threshold voltage

Input current

On resistance

Thermal shutdown temperature

Overcurrent protection

Switching time

Diode forward voltage

Between drain and source

Avalanche energy

Symbol

V (BR) DSS

VDD (OPR)

IDSS (1)

IDSS (2)

Vth

IGSS

RDS (ON)

TS

IS

tON

tOFF

VDSF

EA

Test

Cir-

Test Condition

cuit

― VGS = 0, ID = 10 mA

―

―

― VGS = 0, VDS = 40 V

― VGS = 0, VDS = 24 V

― VGS = 10 V, ID = 1 mA

―

VGS = 5 V,

at normal operation

― VGS = 5 V, ID = 1 A

―

―

― VDS = 12 V, VGS = 5 V

1

VDS = 12 V, VGS = 5 V,

RL = 12Ω

― IF = 1.5 A

― L = 10 mH, Single pulse

Test Circuit 1

Switching Time

TPD1024AS

Min Typ. Max Unit

4.5

5

6

V

Min Typ. Max Unit

40

―

―

V

―

―

18

V

―

―

3

mA

―

―

100 µA

0.8

―

2.5

V

―

―

300 µA

―

―

0.5

Ω

―

160

―

°C

―

3.5

―

A

―

50

―

µs

―

10

―

µs

―

0.9

1.8

V

30

―

―

mJ

3

2002-10-24

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