TFDS6502E データシートの表示（PDF） - Vishay Semiconductors
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TFDS6502E
Vishay Semiconductors
TFDS6502E Datasheet PDF : 17 Pages
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TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E
Vishay Semiconductor
Optoelectronic Characteristics
Tamb = 25_C, VCC = 2.6 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol Min.
Receiver
Minimum Detection TFDS6502E/ TFDT6502E
Ee
Threshold Irradiance, 9.6 kbit/s to 115.2 kbit/s
SIR Mode
l = 850 nm to 900 nm
TFDU6102E, TFDS6402
Ee
9.6 kbit/s to 115.2 kbit/s
l = 850 nm to 900 nm
Minimum Detection TFDS6502E/ TFDT6502E
Ee
Threshold Irradiance, 1.152 Mbit/s
MIR Mode
l = 850 nm to 900 nm
TFDU6102E, TFDS6402
Ee
1.152 Mbit/s
l = 850 nm to 900 nm
Minimum Detection TFDS6502E/ TFDT6502E
Ee
Threshold Irradiance, 4.0 Mbit/s
FIR Mode
l = 850 nm to 900 nm
TFDU6102E, TFDS6402
Ee
4.0 Mbit/s
l = 850 nm to 900 nm
Maximum Detection l = 850 nm to 900 nm
Threshold Irradiance
Ee
5
Logic LOW Receiver
Input Irradiance
Ee
4
Rise Time of Output 10% to 90%, @2.2 kΩ, 15 pF
Signal––,,,,klll
tr (Rxd)
10
Fall Time of Output 90% to 10%, @2.2 kΩ, 15 pF
Signal
tf (Rxd)
10
Rxd Pulse Width of
Output Signal, 50%
SIR Mode
Input pulse length 20 µs, 9.6 kbit/s
Input pulse length 1.41 ms,
115.2 kbit/s
tPW
1.2
tPW
1.2
Rxd Pulse Width of
Output Signal, 50%
MIR Mode
Input pulse length 217 ns,
1.152 Mbit/s
tPW
110
Rxd Pulse Width of Input pulse length 125 ns, 4.0 Mbit/s tPW
100
Output Signal, 50%
FIR Mode
Input pulse length 250 ns, 4.0 Mbit/s tPW
200
Stochastic Jitter,
Input Irradiance = 100 mW/m2,
Leading Edge,
4.0 Mbit/s
FIR Mode
Latency
tL
Typ. Max. Unit
20
35 mW/m2
25
40 mW/m2
50
mW/m2
65
mW/m2
65
100 mW/m2
85
100 mW/m2
10
kW/m2
mW/m2
40
ns
40
ns
10
20
µs
1/2 bit µs
length
260
ns
160
ns
290
ns
±10
ns
120 300
µs
www.vishay.com
6
Document Number 82526
Rev. B1.6, 02–Nov–00
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