TB62702F データシートの表示（PDF） - Toshiba

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TB62702F

TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

TB62702P/F

RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C, VSS = 0 V)

CHARACTERISTIC

SYMBOL

CONDITION

MIN TYP. MAX UNIT

Supply Voltage

Input Voltage

"H" Level

"L" Level

Output Drain−Source Voltage

Output Current

P

Power Dissipation

F

VDD

VIH

VIL

VOUT

IOUT

―

―

―

―

Duty = 100%, All output on

4.5

5

5.5

V

0.7

VDD

―

VDD

V

0

―

0.3

VDD

―

―

30

V

―

―

24

mA /

ch

―

―

― 760

PD

mW

(Note 1) ―

― 470

Note 1: On Glass Epoxy (50 × 50 × 1.6 mm Cu 40%)

ELECTRICAL CHARACTERISTICS (Ta = −40~85°C, VDD = 4.5~5.5 V, VSS = 0 V)

CHARACTERISTIC

Output Voltage

Output Resistor

"L" Level

"L" Level

"L" Level

"L" Level

Output Leakage Current

SYMBOL

VDS1

VDS1

VDS2

VDS2

RON

IOZ1

IOZ2

TEST

CIR−

CUIT

TEST CONDITION

― IOUT = 15 mA, Ta = 25°C

― IOUT = 15 mA

― IOUT = 26 mA, Ta = 25°C

― IOUT = 26 mA

― Ta = 25°C, IOUT = 26 mA

―

VOUT = 30 V, EN = "L"

1 bit

―

VOUT = 30 V, EN = "L"

10 bit

MIN TYP. MAX UNIT

―

― 0.18

―

― 0.27

V

―

― 0.31

―

― 0.47

―

―

12

Ω

―

―

10

µA

―

―

±1

Input Current

Output Current

"H" Level

"L" Level

Input Voltage

"H" Level

"L" Level

Operating Supply Current

Standby Supply Current

IIN

IIL

IOH

IOL

VIH

VIL

IDD1

IDD2

― VIN = VDD or VSS

― ENABLE, VIN = VSS

―

S−OUT

VDS = 4.6 V, VDD = 5.0 V

―

S−OUT

VDS = 0.4 V, VDD = 5.0 V

―

―

―

―

―

fCLK = 5 MHz

NO loads, 1 bit

―

―

―

―

±1

µA

−27.5 −55.0 −110.0

−400 −600 ―

µA

400 600 ―

0.7

VDD

―

VDD

V

0

―

0.3

VDD

―

― 1500

µA

―

― 500

3

2006-06-14

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