SUM110N06-06 データシートの表示（PDF） - Vishay Semiconductors
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SUM110N06-06 Datasheet PDF : 8 Pages
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SUM110N06-06
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.006
TO-263
ID (A)
110a
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
APPLICATIONS
• Industrial
D
Available
RoHS*
COMPLIANT
G DS
Top View
Ordering Information: SUM110N06-06
SUM110N06-06-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
ID
110a
78
A
IDM
300
Avalanche Current
IAR
70
Repetitive Avalanche Energyb
L = 0.1 mH
EAR
245
mJ
Power Dissipation
TC = 25 °C
TA = 25 °Cd
230c
PD
W
3.75
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
PCB Mountd
Symbol
RthJA
RthJC
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72082
S-80108-Rev. B, 21-Jan-08
Limit
40
0.65
Unit
°C/W
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