STB8NM60D データシートの表示（PDF） - STMicroelectronics
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STB8NM60D
STMicroelectronics
STB8NM60D Datasheet PDF : 13 Pages
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STB8NM60D - STP8NM60D
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, VGS= 0
600
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±30V, VDS = 0
VGS(th) Gate Threshold Voltage
VDS= VGS, ID = 250µA
3
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID=2.5A
V
1 µA
10 µA
±100 nA
4
5
V
0.9 1
Ω
Table 5. Dynamic
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance VDS =ID(on) x RDS(on)max
ID = 2.5A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V, f=1 MHz, VGS=0
Coss
(2)
eq.
Equivalent Ouput
Capacitance
VGS=0, VDS =0V to 480V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=400V, ID = 5A
VGS =10V
(see Figure 13)
2.4
S
380
pF
170
pF
14
pF
60
pF
15 18 nC
4
nC
8
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Rev2
3/13
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