STB8NM60D データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
STB8NM60D
STMicroelectronics
STB8NM60D Datasheet PDF : 13 Pages
| |||
Electrical ratings
1
Electrical ratings
STB8NM60D - STP8NM60D
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
dv/dt(2)
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20kΩ)
Gate-Source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC=100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
Peak Diode Recovery voltage slope
TJ
Operating Junction Temperature
Tstg
Storage Temperature
1. Pulse width limited by safe operating area
2. ISD ≤5A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche data
Symbol
Parameter
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID=IAR, VDD=50V)
Value
600
600
±30
8
5
32
100
0.8
20
-65 to 150
Value
1.25
62.5
300
Value
2.5
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/13
Rev2
Share Link: 