STGD7NB60K(2007) データシートの表示（PDF） - STMicroelectronics

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STGD7NB60K
(Rev.:2007)

N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH™ IGBT

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STGD7NB60K - STGP7NB60K

(TCASE=25°C unless otherwise specified)

Table 3. Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

VCE(sat)

Collector-emitter saturation VGE= 15V, IC= 7A

voltage

VGE= 15V, IC= 7A, Tc= 125°C

VGE(th) Gate threshold voltage

VCE= VGE, IC= 250 µA

5

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

gfs Forward transconductance VCE = 15V, IC= 7A

V

2.3 2.8 V

1.9

V

7

V

50 µA

500 µA

±100 nA

3.7

S

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

495

pF

77

pF

13

pF

Qg Total gate charge

Qge Gate-emitter charge

Qgc Gate-collector charge

VCE = 480V, IC = 7A,

VGE = 15V,

(see Figure 17)

32.7 45 nC

5.9

nC

18.3

nC

tscw

Short circuit withstand time

VCE=0.5V VBR(CES), RG=10Ω

VGE=15V, Tj=125°C

10

µs

4/15

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