STGD3NB60ST4 データシートの表示（PDF） - STMicroelectronics
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STGD3NB60ST4 Datasheet PDF : 10 Pages
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STGP3NB60S - STGD3NB60S
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220
1.92
62.5
0.5
DPAK
2.75
100
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collectro-Emitter Breakdown IC = 250 µA, VGE = 0
600
Voltage
ICES
Collector cut-off
VCE = Max Rating, TC = 25 °C
10
(VGE = 0)
VCE = Max Rating, TC = 125 °C
100
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
°C/W
°C/W
°C/W
Unit
V
µA
µA
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 3 A
VGE = 15V, IC = 1 A
Min. Typ. Max. Unit
2.5
5
V
1.2
1.5
V
1
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
QG
QGE
QGC
ICL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE = 25 V , IC = 3 A
VCE = 25V, f = 1 MHz, VGE = 0
Min.
1.7
VCE = 480 V, IC = 3 A,
VGE = 15V
Vclamp = 480 V , Tj = 150°C
12
RG = 1KΩ
Typ.
2.5
255
30
5.6
18
5.4
5.5
Max.
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCC = 480 V, IC = 3 A
RG = 1KΩ , VGE = 15 V
VCC= 480 V, IC = 3 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
Min.
Typ.
170
540
300
Max.
Unit
ns
ns
A/µs
µJ
2/10
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