10NM60N(2015) データシートの表示（PDF） - STMicroelectronics

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10NM60N
(Rev.:2015)

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10NM60N, STF10NM60N,

STP10NM60N, STU10NM60N

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET

in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet - production data

7$%





DPAK

7$%







TO-220







TO-220FP

7$%







IPAK

Features

Order code

VDS @TJ

max.

STD10NM60N

STF10NM60N

STP10NM60N

STU10NM60N

650 V

RDS(on)

max.

0.55 Ω

ID PTOT

10 A

70 W

25 W

70 W

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Figure 1. Internal schematic diagram

Applications

'7$%

• Switching applications

Description

*

6

Order code

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

$0Y

Table 1. Device summary

Marking

Package

Packing

STD10NM60N

STF10NM60N

STP10NM60N

STU10NM60N

10NM60N

10NM60N

10NM60N

10NM60N

DPAK

TO-220FP

TO-220

IPAK

Tape and reel

Tube

Tube

Tube

December 2015

This is information on a product in full production.

DocID028726 Rev 1

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